318 research outputs found
Single hole transistor in a p-Si/SiGe quantum well
A single hole transistor is patterned in a p-Si/SiGe quantum well by applying
voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing
the etched semiconductor surface and the mesa walls before evaporation of the
top gates. Pronounced Coulomb blockade effects are observed at small coupling
of the transistor island to source and drain.Comment: 3 pages, 3 figure
Process for the modification of polymers, in particular polymer nanoparticles
The present invention relates to a highly efficient and ultra fast process for the photo-initiated preparation of polymers by polymerization using photoinitiators comprising a phosphorous oxide or -sulfide group and modification of said polymers. In particular the invention relates to an ultra fast process for the photo-initiated preparation of latices comprising polymer nanoparticles by heterophase polymerization using photoinitiators comprising a phosphorous oxide or -sulfide group and their modification. In another aspect, the invention relates to polymers and polymer nanoparticles obtainable by said process
Spin-orbit coupling and phase-coherence in InAs nanowires
We investigated the magnetotransport of InAs nanowires grown by selective
area metal-organic vapor phase epitaxy. In the temperature range between 0.5
and 30 K reproducible fluctuations in the conductance upon variation of the
magnetic field or the back-gate voltage are observed, which are attributed to
electron interference effects in small disordered conductors. From the
correlation field of the magnetoconductance fluctuations the phase-coherence
length l_phi is determined. At the lowest temperatures l_phi is found to be at
least 300 nm, while for temperatures exceeding 2 K a monotonous decrease of
l_phi with temperature is observed. A direct observation of the weak
antilocalization effect indicating the presence of spin-orbit coupling is
masked by the strong magnetoconductance fluctuations. However, by averaging the
magnetoconductance over a range of gate voltages a clear peak in the
magnetoconductance due to the weak antilocalization effect was resolved. By
comparison of the experimental data to simulations based on a recursive
two-dimensional Green's function approach a spin-orbit scattering length of
approximately 70 nm was extracted, indicating the presence of strong spin-orbit
coupling.Comment: 8 pages, 7 figure
Supercurrent in Nb/InAs-Nanowire/Nb Josephson junctions
We report on the fabrication and measurements of planar mesoscopic Josephson
junctions formed by InAs nanowires coupled to superconducting Nb terminals. The
use of Si-doped InAs-nanowires with different bulk carrier concentrations
allowed to tune the properties of the junctions. We have studied the junction
characteristics as a function of temperature, gate voltage, and magnetic field.
In junctions with high doping concentrations in the nanowire Josephson
supercurrent values up to 100\,nA are found. Owing to the use of Nb as
superconductor the Josephson coupling persists at temperatures up to 4K. In all
junctions the critical current monotonously decreased with the magnetic field,
which can be explained by a recently developed theoretical model for the
proximity effect in ultra-small Josephson junctions. For the low-doped
Josephson junctions a control of the critical current by varying the gate
voltage has been demonstrated. We have studied conductance fluctuations in
nanowires coupled to superconducting and normal metal terminals. The
conductance fluctuation amplitude is found to be about 6 times larger in
superconducting contacted nanowires. The enhancement of the conductance
fluctuations is attributed to phase-coherent Andreev reflection as well as to
the large number of phase-coherent channels due to the large superconducting
gap of the Nb electrodes.Comment: 5 Figure, submitted to Journal of Applied Physic
Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers
We have investigated the electrical transport through strained
p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement
shift for diodes with different well width, the shift due to a central
potential spike in a well, and magnetotunnelling spectroscopy demonstrate that
the first two resonances are due to tunnelling through heavy hole levels,
whereas there is no sign of tunnelling through the first light hole state. This
demonstrates for the first time the conservation of the total angular momentum
in valence band resonant tunnelling. It is also shown that conduction through
light hole states is possible in many structures due to tunnelling of carriers
from bulk emitter states.Comment: 4 pages, 4 figure
Analysis of the resistance in p-SiGe over a wide temperature range
The temperature dependence of a system exhibiting a `metal-insulator
transition in two dimensions at zero magnetic field' (MIT) is studied up to
90K. Using a classical scattering model we are able to simulate the
non-monotonic temperature dependence of the resistivity in the metallic high
density regime. We show that the temperature dependence arises from a complex
interplay of metallic and insulating contributions contained in the calculation
of the scattering rate 1/\td(E,T), each dominating in a limited temperature
range.Comment: 4 pages with 5 figure
XXIII International Conference on Spectral Line Shapes
Producción CientíficaDoppler free two-photon optogalvanic spectroscopy has been applied to measure the
electric field strength in the cathode fall region of a hollow cathode discharge, via the Stark
splitting of the 2S level of atomic hydrogen. Important improvements in the experimental
arrangement and in our understanding of the discharge, have allowed us to measure accurately
the dependence of the electric field with different parameters like the cathode material
(stainless steel and tungsten), geometry (10 and 15 mm inner diameter) and the buffer gas. The
study is done for different pressures and currents. The first results seem to reveal different
behaviour in the electric field, depending on the material and geometry of the cathode and the
discharge conditions.Ministerio de Economía, Industria y Competitividad (grants ENE2012- 35902 and BES-2013-063248
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